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Electron‐hole interaction and high‐field transport of photoexcited electrons in GaAs
1.There is a rich, and still growing, amount of literature in this area. We do not attempt to review it completely, but list here, and in Refs. 2, and 3, just a few of the approaches by different groups. J. A. Kash, J. C. Tsang, and J. M. Hvam, Phys. Rev. Lett. 54, 2151 (1985).
2.C. V. Shank, D. H. Auston, E. P. Ippen, and O. Teschke, Solid State Commun. 26, 567 (1978).
3.A. C. S. Algarte and R. Luzzi, Phys. Rev. B 27, 7563 (1983).
4.N. Takenaka, M. Inoue, and Y. Inuishi, J. Phys. Soc. Jpn. 47, 861 (1979).
5.P. Lugli and D. K. Ferry, IEEE Trans. Electron Devices ED‐32, 2431 (1985).
6.R. A. Höpfel, J. Shah, and A. C. Gossard, Phys. Rev. Lett. 56, 765 (1986).
7.R. A. Höpfel, J. Shah, P. A. Wolff, and A. C. Gossard, Phys. Rev. Lett. 56, 2736 (1986).
8.J. Degani, R. F. Leheny, R. E. Nahory, and J. P. Heritage, Appl. Phys. Lett. 39, 569 (1981).
9.M. A. Osman, U. Ravaioli, R. Joshi, W. Pötz, and D. K. Ferry, in Proceedings of the 18th International Conference Phys. Semiconductors, Stockholm, 1986, edited by O. Engström (World Scientific, Singapore, 1987), p. 1311.
9.The specific form of (1) is a straightforward extension to the electron‐hole interaction of the electron‐electron form given in P. Lugli and D. K. Ferry, Physica 117B&118B, 251 (1983).
10.J. M. Ziman, Principles of the Theory of Solids (Cambridge University, London, 1964).
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