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Growth mechanism of amorphous silicon by evaporation containing hydrogen from radio‐frequency discharge
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10.1063/1.338162
/content/aip/journal/jap/61/3/10.1063/1.338162
http://aip.metastore.ingenta.com/content/aip/journal/jap/61/3/10.1063/1.338162
/content/aip/journal/jap/61/3/10.1063/1.338162
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/content/aip/journal/jap/61/3/10.1063/1.338162
1987-02-01
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth mechanism of amorphous silicon by evaporation containing hydrogen from radio‐frequency discharge
http://aip.metastore.ingenta.com/content/aip/journal/jap/61/3/10.1063/1.338162
10.1063/1.338162
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