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Depth distributions and range and shape parameters for 1H and 2H implanted into Si and GaAs in random and channeling orientations
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10.1063/1.337875
/content/aip/journal/jap/61/8/10.1063/1.337875
http://aip.metastore.ingenta.com/content/aip/journal/jap/61/8/10.1063/1.337875
/content/aip/journal/jap/61/8/10.1063/1.337875
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/content/aip/journal/jap/61/8/10.1063/1.337875
1987-04-15
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth distributions and range and shape parameters for 1H and 2H implanted into Si and GaAs in random and channeling orientations
http://aip.metastore.ingenta.com/content/aip/journal/jap/61/8/10.1063/1.337875
10.1063/1.337875
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