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Properties of high‐purity Al x Ga1−x As grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
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10.1063/1.339792
/content/aip/journal/jap/62/2/10.1063/1.339792
http://aip.metastore.ingenta.com/content/aip/journal/jap/62/2/10.1063/1.339792
/content/aip/journal/jap/62/2/10.1063/1.339792
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/content/aip/journal/jap/62/2/10.1063/1.339792
1987-07-15
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
http://aip.metastore.ingenta.com/content/aip/journal/jap/62/2/10.1063/1.339792
10.1063/1.339792
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