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A structural and electrical comparison of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidation
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10.1063/1.340450
/content/aip/journal/jap/63/10/10.1063/1.340450
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/10/10.1063/1.340450
/content/aip/journal/jap/63/10/10.1063/1.340450
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/content/aip/journal/jap/63/10/10.1063/1.340450
1988-05-15
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A structural and electrical comparison of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidation
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/10/10.1063/1.340450
10.1063/1.340450
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