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Growth and characterization of Si1−x Ge x and Ge epilayers on (100) Si
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10.1063/1.340312
/content/aip/journal/jap/63/12/10.1063/1.340312
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/12/10.1063/1.340312
/content/aip/journal/jap/63/12/10.1063/1.340312
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/content/aip/journal/jap/63/12/10.1063/1.340312
1988-06-15
2015-01-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of Si1−xGex and Ge epilayers on (100) Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/12/10.1063/1.340312
10.1063/1.340312
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