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The formation of a continuous amorphous layer by room‐temperature implantation of boron into silicon
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10.1063/1.341122
/content/aip/journal/jap/63/5/10.1063/1.341122
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/5/10.1063/1.341122
/content/aip/journal/jap/63/5/10.1063/1.341122
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/content/aip/journal/jap/63/5/10.1063/1.341122
1988-03-01
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The formation of a continuous amorphous layer by room‐temperature implantation of boron into silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/5/10.1063/1.341122
10.1063/1.341122
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