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Enhanced and wafer‐dependent oxygen diffusion in CZ‐Si at 500–700 °C
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10.1063/1.339894
/content/aip/journal/jap/63/6/10.1063/1.339894
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/6/10.1063/1.339894
/content/aip/journal/jap/63/6/10.1063/1.339894
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/content/aip/journal/jap/63/6/10.1063/1.339894
1988-03-15
2014-07-12
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced and wafer‐dependent oxygen diffusion in CZ‐Si at 500–700 °C
http://aip.metastore.ingenta.com/content/aip/journal/jap/63/6/10.1063/1.339894
10.1063/1.339894
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