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Lattice relaxation mechanism of ZnSe layer grown on a (100) GaAs substrate tilted toward 〈011〉
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10.1063/1.341963
/content/aip/journal/jap/64/2/10.1063/1.341963
http://aip.metastore.ingenta.com/content/aip/journal/jap/64/2/10.1063/1.341963
/content/aip/journal/jap/64/2/10.1063/1.341963
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/content/aip/journal/jap/64/2/10.1063/1.341963
1988-07-15
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice relaxation mechanism of ZnSe layer grown on a (100) GaAs substrate tilted toward 〈011〉
http://aip.metastore.ingenta.com/content/aip/journal/jap/64/2/10.1063/1.341963
10.1063/1.341963
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