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Electrical characterization of GaAs/Al0.30Ga0.70 As p +n heterojunctions grown by metalorganic vapor phase epitaxy
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10.1063/1.343209
/content/aip/journal/jap/65/12/10.1063/1.343209
http://aip.metastore.ingenta.com/content/aip/journal/jap/65/12/10.1063/1.343209
/content/aip/journal/jap/65/12/10.1063/1.343209
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/content/aip/journal/jap/65/12/10.1063/1.343209
1989-06-15
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of GaAs/Al0.30Ga0.70 As p+‐n heterojunctions grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/65/12/10.1063/1.343209
10.1063/1.343209
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