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Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers
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10.1063/1.342853
/content/aip/journal/jap/65/5/10.1063/1.342853
http://aip.metastore.ingenta.com/content/aip/journal/jap/65/5/10.1063/1.342853
/content/aip/journal/jap/65/5/10.1063/1.342853
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/content/aip/journal/jap/65/5/10.1063/1.342853
1989-03-01
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers
http://aip.metastore.ingenta.com/content/aip/journal/jap/65/5/10.1063/1.342853
10.1063/1.342853
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