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Pressure dependence of i n s i t u boron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure
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10.1063/1.343794
/content/aip/journal/jap/66/10/10.1063/1.343794
http://aip.metastore.ingenta.com/content/aip/journal/jap/66/10/10.1063/1.343794
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/content/aip/journal/jap/66/10/10.1063/1.343794
1989-11-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pressure dependence of insitu boron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure
http://aip.metastore.ingenta.com/content/aip/journal/jap/66/10/10.1063/1.343794
10.1063/1.343794
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