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Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering
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10.1063/1.343535
/content/aip/journal/jap/66/2/10.1063/1.343535
http://aip.metastore.ingenta.com/content/aip/journal/jap/66/2/10.1063/1.343535
/content/aip/journal/jap/66/2/10.1063/1.343535
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/content/aip/journal/jap/66/2/10.1063/1.343535
1989-07-15
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering
http://aip.metastore.ingenta.com/content/aip/journal/jap/66/2/10.1063/1.343535
10.1063/1.343535
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