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Hydrogen as the cause of pit formation during laser recrystallization of silicon‐on‐insulator films
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10.1063/1.343941
/content/aip/journal/jap/66/9/10.1063/1.343941
http://aip.metastore.ingenta.com/content/aip/journal/jap/66/9/10.1063/1.343941
/content/aip/journal/jap/66/9/10.1063/1.343941
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/content/aip/journal/jap/66/9/10.1063/1.343941
1989-11-01
2014-07-14
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen as the cause of pit formation during laser recrystallization of silicon‐on‐insulator films
http://aip.metastore.ingenta.com/content/aip/journal/jap/66/9/10.1063/1.343941
10.1063/1.343941
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