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Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1−x P x
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29.We define an ideal vacancy in a manner identical to that used in other empirical tightbinding schemes (Ref. 26). That is, an atom is removed from the perfect crystal, leaving all other atoms at their original positions. The atomiclike orbitals are retained on all other atoms and their interactions are assumed unaltered.
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