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Impact ionization of deep traps in semi‐insulating GaAs substrates
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11.For example, Lampert’s formula gives for a separation between contacts a trap density and assuming a Fermi level close to the midgap value so that the EL2 occupancy
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13.Because of hysteresis, care was required to set an appropriate ramp rate and delay between readings to avoid spurious effects. The integration time setting was “long”, and a range 0–10 V of side‐gate bias was divided into at least 500 equally spaced steps. The delay between readings was set at
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15.Also known in the literature as S‐BNDC.
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25.The calculations in Ref. 24 relate only to the spherically symmetric part of the electron distribution function.
26.Since nothing is known of any difference between the rates and we equate them for simplicity.
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