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Field‐effect transistor structure based on strain‐induced polarization charges
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22.We neglect any space charge in the (Al,In)As layer. This assumes
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23.In this case the thickness in such a way that remains finite.
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Scitation: Field‐effect transistor structure based on strain‐induced polarization charges
http://aip.metastore.ingenta.com/content/aip/journal/jap/67/5/10.1063/1.345474
10.1063/1.345474
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