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Preparation of hydrogenated amorphous silicon with tunable gap by homogeneous chemical vapor deposition
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10.1063/1.347106
/content/aip/journal/jap/68/1/10.1063/1.347106
http://aip.metastore.ingenta.com/content/aip/journal/jap/68/1/10.1063/1.347106
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/content/aip/journal/jap/68/1/10.1063/1.347106
1990-07-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preparation of hydrogenated amorphous silicon with tunable gap by homogeneous chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/68/1/10.1063/1.347106
10.1063/1.347106
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