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Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy
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10.1063/1.346811
/content/aip/journal/jap/68/2/10.1063/1.346811
http://aip.metastore.ingenta.com/content/aip/journal/jap/68/2/10.1063/1.346811
/content/aip/journal/jap/68/2/10.1063/1.346811
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/content/aip/journal/jap/68/2/10.1063/1.346811
1990-07-15
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/68/2/10.1063/1.346811
10.1063/1.346811
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