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Removal of the surface contamination layer from CF4 plasma etched GaAs(100) substrate by thermal annealing in hydrogen
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10.1063/1.346138
/content/aip/journal/jap/68/9/10.1063/1.346138
http://aip.metastore.ingenta.com/content/aip/journal/jap/68/9/10.1063/1.346138
/content/aip/journal/jap/68/9/10.1063/1.346138
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/content/aip/journal/jap/68/9/10.1063/1.346138
1990-11-01
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Removal of the surface contamination layer from CF4 plasma etched GaAs(100) substrate by thermal annealing in hydrogen
http://aip.metastore.ingenta.com/content/aip/journal/jap/68/9/10.1063/1.346138
10.1063/1.346138
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