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Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.
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10.1063/1.347694
/content/aip/journal/jap/69/1/10.1063/1.347694
http://aip.metastore.ingenta.com/content/aip/journal/jap/69/1/10.1063/1.347694
/content/aip/journal/jap/69/1/10.1063/1.347694
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/content/aip/journal/jap/69/1/10.1063/1.347694
1991-01-01
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.
http://aip.metastore.ingenta.com/content/aip/journal/jap/69/1/10.1063/1.347694
10.1063/1.347694
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