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Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6 gas
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10.1063/1.347215
/content/aip/journal/jap/69/3/10.1063/1.347215
http://aip.metastore.ingenta.com/content/aip/journal/jap/69/3/10.1063/1.347215
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/content/aip/journal/jap/69/3/10.1063/1.347215
1991-02-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6 gas
http://aip.metastore.ingenta.com/content/aip/journal/jap/69/3/10.1063/1.347215
10.1063/1.347215
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