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Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
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10.1063/1.349645
/content/aip/journal/jap/70/2/10.1063/1.349645
http://aip.metastore.ingenta.com/content/aip/journal/jap/70/2/10.1063/1.349645
/content/aip/journal/jap/70/2/10.1063/1.349645
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/content/aip/journal/jap/70/2/10.1063/1.349645
1991-07-15
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
http://aip.metastore.ingenta.com/content/aip/journal/jap/70/2/10.1063/1.349645
10.1063/1.349645
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