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On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature
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10.1063/1.349295
/content/aip/journal/jap/70/6/10.1063/1.349295
http://aip.metastore.ingenta.com/content/aip/journal/jap/70/6/10.1063/1.349295
/content/aip/journal/jap/70/6/10.1063/1.349295
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/content/aip/journal/jap/70/6/10.1063/1.349295
1991-09-15
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/70/6/10.1063/1.349295
10.1063/1.349295
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