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Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy
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10.1063/1.350697
/content/aip/journal/jap/71/1/10.1063/1.350697
http://aip.metastore.ingenta.com/content/aip/journal/jap/71/1/10.1063/1.350697
/content/aip/journal/jap/71/1/10.1063/1.350697
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/content/aip/journal/jap/71/1/10.1063/1.350697
1992-01-01
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/71/1/10.1063/1.350697
10.1063/1.350697
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