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Effects of rapid thermal annealing on the formation of shallow p + n junction by implanting BF2 + ions into thin metal films on Si substrate. II. Thin cobalt films
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10.1063/1.351270
/content/aip/journal/jap/71/3/10.1063/1.351270
http://aip.metastore.ingenta.com/content/aip/journal/jap/71/3/10.1063/1.351270
/content/aip/journal/jap/71/3/10.1063/1.351270
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/content/aip/journal/jap/71/3/10.1063/1.351270
1992-02-01
2015-05-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of rapid thermal annealing on the formation of shallow p+n junction by implanting BF2+ ions into thin metal films on Si substrate. II. Thin cobalt films
http://aip.metastore.ingenta.com/content/aip/journal/jap/71/3/10.1063/1.351270
10.1063/1.351270
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