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Tunneling through thin oxide interface layers in a‐Si:H Schottky diodes
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10.1063/1.350778
/content/aip/journal/jap/71/9/10.1063/1.350778
http://aip.metastore.ingenta.com/content/aip/journal/jap/71/9/10.1063/1.350778
/content/aip/journal/jap/71/9/10.1063/1.350778
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/content/aip/journal/jap/71/9/10.1063/1.350778
1992-05-01
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunneling through thin oxide interface layers in a‐Si:H Schottky diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/71/9/10.1063/1.350778
10.1063/1.350778
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