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Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells
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10.1063/1.352013
/content/aip/journal/jap/72/11/10.1063/1.352013
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/11/10.1063/1.352013
/content/aip/journal/jap/72/11/10.1063/1.352013
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/content/aip/journal/jap/72/11/10.1063/1.352013
1992-12-01
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/11/10.1063/1.352013
10.1063/1.352013
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