1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Generation of divacancies in silicon by MeV electrons: Dose rate dependence and influence of Sn and P
Rent:
Rent this article for
USD
10.1063/1.351961
/content/aip/journal/jap/72/12/10.1063/1.351961
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/12/10.1063/1.351961
/content/aip/journal/jap/72/12/10.1063/1.351961
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/72/12/10.1063/1.351961
1992-12-15
2014-12-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Generation of divacancies in silicon by MeV electrons: Dose rate dependence and influence of Sn and P
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/12/10.1063/1.351961
10.1063/1.351961
SEARCH_EXPAND_ITEM