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Molecular‐beam epitaxial growth and characterization of silicon‐doped AlGaAs and GaAs on (311)A GaAs substrates and their device applications
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10.1063/1.351474
/content/aip/journal/jap/72/7/10.1063/1.351474
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/7/10.1063/1.351474
/content/aip/journal/jap/72/7/10.1063/1.351474
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/content/aip/journal/jap/72/7/10.1063/1.351474
1992-10-01
2015-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular‐beam epitaxial growth and characterization of silicon‐doped AlGaAs and GaAs on (311)A GaAs substrates and their device applications
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/7/10.1063/1.351474
10.1063/1.351474
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