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Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques
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10.1063/1.351538
/content/aip/journal/jap/72/7/10.1063/1.351538
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/7/10.1063/1.351538
/content/aip/journal/jap/72/7/10.1063/1.351538
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/content/aip/journal/jap/72/7/10.1063/1.351538
1992-10-01
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/7/10.1063/1.351538
10.1063/1.351538
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