1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
Rent:
Rent this article for
USD
10.1063/1.351416
/content/aip/journal/jap/72/8/10.1063/1.351416
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/8/10.1063/1.351416
/content/aip/journal/jap/72/8/10.1063/1.351416
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/72/8/10.1063/1.351416
1992-10-15
2014-09-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/72/8/10.1063/1.351416
10.1063/1.351416
SEARCH_EXPAND_ITEM