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On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. I. Zero bias barrier heights and current transport mechanism
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10.1063/1.354670
/content/aip/journal/jap/74/4/10.1063/1.354670
http://aip.metastore.ingenta.com/content/aip/journal/jap/74/4/10.1063/1.354670
/content/aip/journal/jap/74/4/10.1063/1.354670
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/content/aip/journal/jap/74/4/10.1063/1.354670
1993-08-15
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. I. Zero bias barrier heights and current transport mechanism
http://aip.metastore.ingenta.com/content/aip/journal/jap/74/4/10.1063/1.354670
10.1063/1.354670
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