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Thermally annealed GaN nucleation layers and the device‐quality metal organic chemical vapor deposition growth of Si‐doped GaN films on (00.1) sapphire
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10.1063/1.356590
/content/aip/journal/jap/75/11/10.1063/1.356590
http://aip.metastore.ingenta.com/content/aip/journal/jap/75/11/10.1063/1.356590
/content/aip/journal/jap/75/11/10.1063/1.356590
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/content/aip/journal/jap/75/11/10.1063/1.356590
1994-06-01
2015-05-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally annealed GaN nucleation layers and the device‐quality metal organic chemical vapor deposition growth of Si‐doped GaN films on (00.1) sapphire
http://aip.metastore.ingenta.com/content/aip/journal/jap/75/11/10.1063/1.356590
10.1063/1.356590
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