1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Growth studies of erbium‐doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl‐based erbium sources
Rent:
Rent this article for
USD
10.1063/1.357737
/content/aip/journal/jap/76/3/10.1063/1.357737
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/3/10.1063/1.357737
Loading

Article metrics loading...

/content/aip/journal/jap/76/3/10.1063/1.357737
1994-08-01
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth studies of erbium‐doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl‐based erbium sources
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/3/10.1063/1.357737
10.1063/1.357737
SEARCH_EXPAND_ITEM