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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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10.1063/1.358463
/content/aip/journal/jap/76/3/10.1063/1.358463
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/3/10.1063/1.358463
/content/aip/journal/jap/76/3/10.1063/1.358463
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/content/aip/journal/jap/76/3/10.1063/1.358463
1994-08-01
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/3/10.1063/1.358463
10.1063/1.358463
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