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Electrical characterization and modeling of wide‐band‐gap porous silicon pn diodes
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10.1063/1.357609
/content/aip/journal/jap/76/4/10.1063/1.357609
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/4/10.1063/1.357609
/content/aip/journal/jap/76/4/10.1063/1.357609
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/content/aip/journal/jap/76/4/10.1063/1.357609
1994-08-15
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization and modeling of wide‐band‐gap porous silicon p‐n diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/4/10.1063/1.357609
10.1063/1.357609
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