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n‐type polycrystalline silicon films obtained by crystallization of in situ phosphorus‐doped amorphous silicon films deposited at low pressure
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10.1063/1.357167
/content/aip/journal/jap/76/9/10.1063/1.357167
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/9/10.1063/1.357167
/content/aip/journal/jap/76/9/10.1063/1.357167
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/content/aip/journal/jap/76/9/10.1063/1.357167
1994-11-01
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: n‐type polycrystalline silicon films obtained by crystallization of insitu phosphorus‐doped amorphous silicon films deposited at low pressure
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/9/10.1063/1.357167
10.1063/1.357167
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