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Fundamental electrical properties of fluorinated and N2O plasma‐annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures
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10.1063/1.357170
/content/aip/journal/jap/76/9/10.1063/1.357170
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/9/10.1063/1.357170
/content/aip/journal/jap/76/9/10.1063/1.357170
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/content/aip/journal/jap/76/9/10.1063/1.357170
1994-11-01
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fundamental electrical properties of fluorinated and N2O plasma‐annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures
http://aip.metastore.ingenta.com/content/aip/journal/jap/76/9/10.1063/1.357170
10.1063/1.357170
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