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Lateral junctions of molecular beam epitaxial grown Si‐doped GaAs and AlGaAs on patterned substrates
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10.1063/1.359367
/content/aip/journal/jap/77/1/10.1063/1.359367
http://aip.metastore.ingenta.com/content/aip/journal/jap/77/1/10.1063/1.359367
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/content/aip/journal/jap/77/1/10.1063/1.359367
1995-01-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral junctions of molecular beam epitaxial grown Si‐doped GaAs and AlGaAs on patterned substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/77/1/10.1063/1.359367
10.1063/1.359367
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