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Photoluminescence from Si(001) films doped with 100–1000 eV B+ ions during deposition by molecular beam epitaxy
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10.1063/1.359428
/content/aip/journal/jap/77/9/10.1063/1.359428
http://aip.metastore.ingenta.com/content/aip/journal/jap/77/9/10.1063/1.359428
/content/aip/journal/jap/77/9/10.1063/1.359428
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/content/aip/journal/jap/77/9/10.1063/1.359428
1995-05-01
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from Si(001) films doped with 100–1000 eV B+ ions during deposition by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/77/9/10.1063/1.359428
10.1063/1.359428
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