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Mechanism for stress‐induced leakage currents in thin silicon dioxide films
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10.1063/1.359905
/content/aip/journal/jap/78/6/10.1063/1.359905
http://aip.metastore.ingenta.com/content/aip/journal/jap/78/6/10.1063/1.359905
/content/aip/journal/jap/78/6/10.1063/1.359905
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/content/aip/journal/jap/78/6/10.1063/1.359905
1995-09-15
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for stress‐induced leakage currents in thin silicon dioxide films
http://aip.metastore.ingenta.com/content/aip/journal/jap/78/6/10.1063/1.359905
10.1063/1.359905
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