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Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of SiGe/Si nanostructures
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10.1063/1.365212
/content/aip/journal/jap/81/10/10.1063/1.365212
http://aip.metastore.ingenta.com/content/aip/journal/jap/81/10/10.1063/1.365212
/content/aip/journal/jap/81/10/10.1063/1.365212
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/content/aip/journal/jap/81/10/10.1063/1.365212
1997-05-15
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/81/10/10.1063/1.365212
10.1063/1.365212
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