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Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering
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10.1063/1.366319
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    Affiliations:
    1 Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
    2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
    3 Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
    4 Laboratory of Optical Disks, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
    J. Appl. Phys. 82, 5154 (1997); http://dx.doi.org/10.1063/1.366319
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/content/aip/journal/jap/82/10/10.1063/1.366319
1997-11-15
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/82/10/10.1063/1.366319
10.1063/1.366319
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