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Aspect-ratio-dependent charging in high-density plasmas
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12.The difference between the potentials of the edge line (low) and the neighboring line (high) steers the ions approaching the trench bottom towards the low equipotential. Since more ions impinge on the bottom surface near the sidewall foot of the edge line, a larger positive potential builds up at that location, resulting in an asymmetric potential distribution at the trench bottom. The symmetric potential distribution calculated by Kinoshita et al. (Ref. 6) is not physical and suggests that notching should occur at both sidewalls confining the edge trench, contrary to experimental evidence (Refs. 3 and 4).
13.This conjecture is based on maintaining the substrate potential close to 0 V.
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15.G. S. Hwang and K. P. Giapis, J. Appl. Phys. 81, 3433(1997).
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