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Concentration dependent photoluminescence of Te-doped layers grown by liquid phase epitaxy
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10.1063/1.365754
/content/aip/journal/jap/82/8/10.1063/1.365754
http://aip.metastore.ingenta.com/content/aip/journal/jap/82/8/10.1063/1.365754
/content/aip/journal/jap/82/8/10.1063/1.365754
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/content/aip/journal/jap/82/8/10.1063/1.365754
1997-10-15
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Concentration dependent photoluminescence of Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/82/8/10.1063/1.365754
10.1063/1.365754
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