1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Residual defects in low energy and low dose antimony ion-implanted silicon
Rent:
Rent this article for
USD
10.1063/1.367334
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Department of Physics, Science University of Tokyo, 1-3 Kogurazaka Shinjuku-ku, 162 Tokyo, Japan
    2 Process Development Division, Fujitsu Ltd. 1015, Kamikodanaka, Nakahara-ku, Kawasaki, 211, Japan
    3 Tokyo Metropolitan Technical College, 1-10-40 Higashiohi, Shinagawa-ku, Tokyo 140, Japan
    4 Department of Physics, Science University of Tokyo, 1-3 Kogurazaka Shinjuku-ku, 162 Tokyo, Japan
    J. Appl. Phys. 83, 5159 (1998); http://dx.doi.org/10.1063/1.367334
/content/aip/journal/jap/83/10/10.1063/1.367334
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/10/10.1063/1.367334
/content/aip/journal/jap/83/10/10.1063/1.367334
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/83/10/10.1063/1.367334
1998-05-15
2014-07-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Residual defects in low energy and low dose antimony ion-implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/10/10.1063/1.367334
10.1063/1.367334
SEARCH_EXPAND_ITEM