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Effect of wet oxidized layer on the interdiffusion of InGaAs/GaAs quantum wells
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10.1063/1.367505
/content/aip/journal/jap/83/11/10.1063/1.367505
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/11/10.1063/1.367505
/content/aip/journal/jap/83/11/10.1063/1.367505
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/content/aip/journal/jap/83/11/10.1063/1.367505
1998-06-01
2014-09-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of wet oxidized AlxGa1−xAs layer on the interdiffusion of InGaAs/GaAs quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/11/10.1063/1.367505
10.1063/1.367505
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