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Counterdoped very shallow junctions obtained by B and Sb implantation and codiffusion in Si
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10.1063/1.366893
/content/aip/journal/jap/83/3/10.1063/1.366893
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/3/10.1063/1.366893
/content/aip/journal/jap/83/3/10.1063/1.366893
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/content/aip/journal/jap/83/3/10.1063/1.366893
1998-02-01
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/3/10.1063/1.366893
10.1063/1.366893
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