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Properties of amorphous and crystalline thin films deposited on Si from a precursor
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10.1063/1.367277
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    Affiliations:
    1 Laboratoire de Physique de la Matière, UMR CNRS 5511, Institut National des Sciences Appliquées de Lyon, F-69621 Villeurbanne Cedex, France
    2 Laboratoire de Physique de la Matière, UMR CNRS 5511, Institut National des Sciences Appliquées de Lyon, F-69621 Villeurbanne Cedex, France
    3 France-Télécom–CNET/CNS, BP 98, F-38243 Meylan Cedex, France
    4 Laboratoire de Physique de la Matière, UMR CNRS 5511, Institut National des Sciences Appliquées de Lyon, F-69621 Villeurbanne Cedex, France
    5 France-Télécom–CNET/CNS, BP 98, F-38243 Meylan Cedex, France
    6 Lam Research Corporation, CVD Division, Fremont, California 94538
    J. Appl. Phys. 83, 4823 (1998); http://dx.doi.org/10.1063/1.367277
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/content/aip/journal/jap/83/9/10.1063/1.367277
1998-05-01
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor
http://aip.metastore.ingenta.com/content/aip/journal/jap/83/9/10.1063/1.367277
10.1063/1.367277
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